STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 , 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS(on) max ID PTOT STD2NK100Z 1000 V < 8.5 1.85 A 70 W STP2NK100Z 1000 V < 8.5 1.85 A 70 W < 8.5 1.85 A STU2NK100Z 1000 V 3 1 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability 70 W 1 2 IPAK TO-220 3 1 DPAK Application 3 2 Figure 1. Internal schematic diagram Switching applications Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device summary Order codes Marking Package Packaging STD2NK100Z 2NK100Z DPAK Tape and reel STP2NK100Z 2NK100Z TO-220 Tube STU2NK100Z 2NK100Z IPAK Tube June 2008 Rev 2 1/16 www.st.com 16 Contents STD2NK100Z - STP2NK100Z - STU2NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 STD2NK100Z - STP2NK100Z - STU2NK100Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1000 V VGS Gate-source voltage 30 V ID Drain current (continuous) at TC = 25 C 1.85 A ID Drain current (continuous) at TC = 100 C 1.16 A IDM (1) Drain current (pulsed) 7.4 A PTOT Total dissipation at TC = 25 C 70 W Derating factor 0.56 W/C G-S ESD (HBM C=100 pF, R=1.5 k) 3000 V 2.5 V/ns -55 to 150 C VESD(G-S) dv/dt (2) Tj Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD 1.85 A, di/dt 200 A/s, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb minimum footprint Rthj-amb Thermal resistance junction-amb max Tl Table 4. Maximum lead temperature for soldering purpose IPAK DPAK 1.79 -- C/W -- 62.5 50 100 C/W C/W 300 C Value Unit Avalanche data Symbol Parameter IAR (1) Avalanche current, repetitive or not-repetitive 1.85 A EAS (2) Single pulse avalanche energy 170 mJ 1. Pulse width limited by Tjmax 2. Starting Tj = 25C, ID = IAR, VDD = 50V 3/16 Electrical characteristics 2 STD2NK100Z - STP2NK100Z - STU2NK100Z Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS= 0 Min. Typ. Max. 1000 V VDS = Max rating, 1 50 A A Gate body leakage current (VDS = 0) VGS = 30 V 10 A VGS(th) Gate threshold voltage VDS= VGS, ID = 50 A 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 0.9 A 6.25 8.5 Typ. Max. Unit Zero gate voltage drain current (VGS = 0) IGSS Symbol gfs (1) 3 Dynamic Parameter Test conditions Min. Forward transconductance VDS =15 V, ID = 0.9 A 2.4 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 499 53 9 pF pF pF Equivalent output capacitance VGS =0, VDS =0 to 800 V 28 pF RG Gate input resistance f=1 MHz, open drain 6.6 Qg Total gate charge Gate-source charge Gate-drain charge VDD=800 V, ID = 1.85 A 16 3 9 nC nC nC Ciss Coss Crss Coss eq.(2) Qgs Qgd VGS =10 V (see Figure 17) Pulsed: pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 Unit VDS = Max rating,Tc=125 C IDSS Table 6. 1. On/off states STD2NK100Z - STP2NK100Z - STU2NK100Z Table 7. Symbol td(on) tr td(off) tr Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Switching times Parameter Test conditions Turn-on delay time Rise time VDD= 500 V, ID= 0.9 A, Turn-off delay time Fall time (see Figure 16) Min. RG=4.7 , VGS=10 V Typ. Max. Unit 7.2 6.5 ns ns 41.5 32.5 ns ns Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 1.85 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 1.85 A, di/dt= 100 A/s, VDD= 60 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 1.85 A, di/dt= 100 A/s, VDD= 60 V, Tj=150 C (see Figure 21) (see Figure 21) Max. Unit 1.85 7.4 A A 1.6 V 476 1.6 6.9 ns C A 532 1.9 88 ns C A 1. Pulse width limited by package 2. Pulsed: pulse duration = 300s, duty cycle 1.5% Table 9. Symbol BVGSO (1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions IGS = 1mA (open drain) Min. Typ. Max. Unit 30 V 1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK Figure 6. Output characteristics Transfer characteristics 6/16 Figure 3. Figure 7. Thermal impedance for TO-220 STD2NK100Z - STP2NK100Z - STU2NK100Z Figure 8. Normalized BVDSS vs temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z Figure 15. Maximum avalanche energy vs temperature AM00056v1 EAS(mJ) 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 8/16 ID=1.85A 10 20 30 40 50 60 70 80 90 100 110 120 130 140 TJ(C) STD2NK100Z - STP2NK100Z - STU2NK100Z 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/16 Package mechanical data 4 STD2NK100Z - STP2NK100Z - STU2NK100Z Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/16 Package mechanical data STD2NK100Z - STP2NK100Z - STU2NK100Z TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 e e1 6.60 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 12/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 13/16 Packaging mechanical data 5 STD2NK100Z - STP2NK100Z - STU2NK100Z Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD2NK100Z - STP2NK100Z - STU2NK100Z 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 24-Oct-2007 1 First release 18-Jun-2008 2 - Inserted new package, mechanical data IPAK - Document status promoted from preliminary data to datasheet. 15/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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